CEH2311 P沟道MOS场效应管 -20V -30.5A 97ohm TSOP-6 marking/标记 114R3 低导通电阻
| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 12V |
| 最大漏极电流IdDrain Current | -3.5A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 97mΩ@ VGS = 2.5V, ID = 3.7A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.6--1V |
| 耗散功率PdPower Dissipation | 2W |
| Description & Applications | P-Channel Enhancement Mode Field Effect Transistor -20V, -3.5A, RDS(ON)= 85mΩ @VGS = -4.5V RDS(ON)= 130mΩ @VGS = -2.5V High dense cell design for extremely low RDS(ON) Rugged and reliable Lead free product is acquired TSOP-6 package |
| 描述与应用 | P沟道增强型场效应晶体管 -20V，3.5A，RDS（ON）=85mΩ@ VGS=-4.5V RDS（ON）=130mΩ@ VGS=-2.5V 高密度电池设计极低的RDS（ON） 坚固可靠 无铅产品可用 TSOP-6封装 |
| 规格书PDF |
