CPH3404 N沟道MOSFET 30V 2.2A SOT-23/SC-59 marking/标记 KD 低电压应用
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 24V |
| 最大漏极电流Id Drain Current | 2.2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.15Ω/Ohm 1A,4V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | |
| 耗散功率Pd Power Dissipation | 100mW/0.1W |
| Description & Applications | N- Channel Silicon MOS FET Very High-Speed Switching Applications High Density Cell Design for Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable High Saturation Current Capability |
| 描述与应用 | N沟道硅MOS FET 非常高速开关应用 高密度电池设计低RDS（ON） 电压控制小信号开关 坚固可靠 高饱和电流能力 |
| 规格书PDF |
