FDG328P P沟道MOS场效应管 -20V -1.5A 210毫欧 SOT-363 marking/标记 28 功率MOSFET DC/DC转换 负载开关 电源管理
| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | -12V |
| 最大漏极电流IdDrain Current | -1.5A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 210mΩ@ VGS = -2.5V, ID = -1.2A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.6~-1.5V |
| 耗散功率PdPower Dissipation | 750mW/0.75W |
| Description & Applications | 20V N-Channel Power Trench MOSFET General Description This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor’s advanced Power Trench process. It has been optimized for power management applications for a wide range of gate drive voltages (2.5V – 12V). Applications • Load switch • Power management • DC/DC converter Features Low gate charge High performance trench technology for extremely low RDS(ON) Compact industry standard SC70-6 surface mount package |
| 描述与应用 | 20V N沟道功率沟槽MOSFET 概述 此P沟道2.5V指定的MOSFET的生产在一个坚固的门版本飞兆半导体先进的功率沟槽过程。它已被优化的栅极驱动电压（2.5V - 12V），适用范围广的电源管理应用。 应用 •负荷开关 •电源管理 •DC/ DC转换器 特点 低栅极电荷 高性能沟道技术极低的RDS（ON） 紧凑型工业标准SC70-6表面贴装封装 |
| 规格书PDF |
