HAF2011-90STR-E N沟道MOSFET 60V 4A TO-263 marking/标记 HAF2011 负荷开关/电源管理/低栅极电荷
| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 16V |
| 最大漏极电流Id Drain Current | 4A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.02Ω/Ohm @2A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.0-2.25mW |
| 耗散功率Pd Power Dissipation | 50W |
| Description & Applications | •Logic level operation (4 to 6 V Gate drive) •High endurance capability against to the short circuit •Built-in the over temperature shut-down circuit •Latch type shut-down operation (Need 0 voltage recovery) |
| 描述与应用 | •逻辑电平操作（4至6 V栅极驱动器） •高续航能力，对短路 •内置过温关断电路 •闭锁类型关机操作（需要0电压恢复） |
| 规格书PDF |
