HAT1043M P沟道MOS场效应管 -20V -4.4A 0.055ohm SOT-163 marking/标记 1043 低驱动电流 2.5V驱动
| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 12V |
| 最大漏极电流IdDrain Current | -4.4A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.055Ω @-3A,-4.5V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.4--1.4V |
| 耗散功率PdPower Dissipation | 2W |
| Description & Applications | Features • Low on-resistance • Low drive current • High density mounting • 2.5 V gate drive device can be driven from 3 V source |
| 描述与应用 | •低导通电阻 •低驱动电流 •高密度安装 •2.5 V门驱动装置可以驱动从3 V源 |
| 规格书PDF |
