HN3G01J-GR FET+BJT复合场效应管 20V 60V marking/标记 ZG SOT-153 高频放大
最大源漏极电压VdsDrain-Source Voltage | JFET N-Channel |
最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
最大漏极电流IdDrain Current | -20V |
源漏极导通电阻RdsDrain-Source On-State Resistance | |
开启电压Vgs(th)Gate-Source Threshold Voltage | |
耗散功率PdPower Dissipation | 25ms@VDS=5V,VGS=0V,f=kHz |
Description & Applications | 6mA~12mA |
描述与应用 | -2.5V |
规格书PDF |