IRFR320TF N沟道MOSFET 40V 3.1A TO-252/D-PAK marking/标记 IRFR320 低栅极电荷/高速开关/极低的RDS
| 最大源漏极电压Vds Drain-Source Voltage | 40V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 3.1A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 1.800Ω/Ohm @1.7A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 2.0-4.0V |
| 耗散功率Pd Power Dissipation | 50W |
| Description & Applications | 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. • 3.1A, 400V • rDS(ON)= 1.800Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards |
| 描述与应用 | 3.1A，400V，1.800欧姆，N沟道功率 MOSFET的 这些是N沟道增强型硅栅 功率场效应晶体管。他们是先进的电源 MOSFET的设计，测试，保证能够承受指定水平的能源模式雪崩击穿 操作。所有这些功率MOSFET是专为应用，如开关稳压器，开关 转换器，电机驱动器，继电器驱动器，驱动器和高要求高的速度和功率双极晶体管开关 低栅极驱动电源。这些类型可以直接操作从集成电路。 •单脉冲能量额定雪崩 •SOA是功耗有限公司 •纳秒的开关速度 •线性传输特性 •高输入阻抗 •相关文献 TB334“指 南焊锡表面装载 组件到PC板 |
| 规格书PDF |
