IRLML6302 P沟道MOS场效应管 -780mA 0.60ohm SOT-23 marking/标记 1CKU 超低导通电阻 低栅极电荷
| 最大源漏极电压VdsDrain-Source Voltage | |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 12V |
| 最大漏极电流IdDrain Current | -780mA/-0.78A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.60Ω @-600mA,-4.5V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.70V |
| 耗散功率PdPower Dissipation | 540mW/0.54W |
| Description & Applications | Ultra Low On-Resistance P-Channel MOSFET Surface Mount lAvailable in Tape & Reel Low Gate Charge |
| 描述与应用 | 超低导通电阻 P沟道MOSFET 表面贴装 在磁带和卷轴lAvailable 低栅极电荷 |
| 规格书PDF |
