MT3S05AFS NPN三极管 fSM marking/标记 2
| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 10V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 5V |
| 集电极连续输出电流ICCollector Current(IC) | 40mA |
| 截止频率fTTranstion Frequency(fT) | 4.5GHZ |
| 直流电流增益hFEDC Current Gain(hFE) | 80~140 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 80mW |
| Description & Applications | TOSHIBA Transistor Silicon NPN Epitaxial Planar Type . * VHF~UHF Band Low-Noise Amplifier Applications * VHF~UHF Band Oscillator Applications * Superior performance in oscillator applications * Superior noise characteristics: NF = 1.4 dB, |S21e|2= 8.5 dB (f = 1 GHz) |
| 描述与应用 | 东芝晶体管NPN硅外延平面型。 * VHF??UHF频段低噪声放大器应用 * VHF??UHF频带振荡器应用 *振荡器应用中的卓越性能 *卓越的噪声特性：NF=1.4，S21E|2= 8.5（F =1GHZ） |
| 规格书PDF |
