NDT453N N沟道MOSFET 30V 6A SOT-223/SC-73/TO261-4 marking/标记 453
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 6A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.028Ω/Ohm 28A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-3V |
| 耗散功率Pd Power Dissipation | 3W |
| Description & Applications | N-Channel Enhancement Mode Field Effect Transistor General Description Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. High density cell design for extremely low RDS(ON) High power and current handling capability in a widely used surface mount package |
| 描述与应用 | N沟道增强型场效应晶体管 概述 电源SOT N沟道增强模式电源领域 场效应晶体管都采用飞兆半导体 专有的，高密度，DMOS技术。这很 高密度的过程特别是针对减少 通态电阻和提供优越的开关 性能。这些器件特别适用于低 笔记本电脑的电源电压应用，如 管理和其它电池供电的电路，快速 开关，低线的功率损耗，耐 瞬变是必要的。 高密度电池设计极低的RDS（ON） 一种广泛使用的高功率和电流处理能力 表面贴装封装 |
| 规格书PDF |
