PHD101NQ03LT N沟道MOSFET 30V 75A TO-252/D-PAK marking/标记 101NQ 优良的热稳定性/宽带UHF/VHF示范放大器
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | |
| 最大漏极电流Id Drain Current | 75A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 4.5Ω/Ohm @25A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -2.0-2.0V |
| 耗散功率Pd Power Dissipation | 166W |
| Description & Applications | N-channel TrenchMOS™ logic level FET |
| 描述与应用 | N沟道的TrenchMOS™逻辑电平FET |
| 规格书PDF |
