PHT6N03T N沟道MOSFET 30V 12.8A SOT-223/SC-73/TO261-4 marking/标记 6N03T 低导通电阻/DMOS技术/
最大源漏极电压Vds Drain-Source Voltage | 30V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 16V |
最大漏极电流Id Drain Current | 12.8A |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.03Ω/Ohm @3.2A,10V |
开启电压Vgs(th) Gate-Source Threshold Voltage | 2.0-4.0V |
耗散功率Pd Power Dissipation | 8.3W |
Description & Applications | |
描述与应用 |
规格书PDF |