PHT6N06T N沟道MOSFET 55V 5.5A SOT-223/SC-73/TO261-4 marking/标记 6N06T 低导通电阻/DMOS技术/
| 最大源漏极电压Vds Drain-Source Voltage | 55V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 5.5A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.15Ω/Ohm @5A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 2.0-4.0V |
| 耗散功率Pd Power Dissipation | 8.3W |
| Description & Applications | |
| 描述与应用 |
| 规格书PDF |
