SI1499DH-T1-E3 P沟道MOS场效应管 -8V -1.6A 0.0622ohm SOT-363 marking/标记 BI 功率MOSFET 超低导通电阻
| 最大源漏极电压VdsDrain-Source Voltage | -8V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 5V |
| 最大漏极电流IdDrain Current | -1.6A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.0622Ω @-2A,-4.5V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.35--0.8V |
| 耗散功率PdPower Dissipation | 2.78W |
| Description & Applications | FEATURES • TrenchFET Power MOSFET • Ultra-Low On-Resistance |
| 描述与应用 | 功率MOSFET •超低导通电阻 |
| 规格书PDF |
