SI2301DS P沟道MOS场效应管 -20V -2.3A 0.105ohm SOT-23 marking/标记 R1
最大源漏极电压VdsDrain-Source Voltage | -20V |
最大栅源极电压Vgs(±)Gate-Source Voltage | 8V |
最大漏极电流IdDrain Current | -2.3A |
源漏极导通电阻RdsDrain-Source On-State Resistance | 0.105Ω @-2.8A,-4.5V |
开启电压Vgs(th)Gate-Source Threshold Voltage | -0.45V |
耗散功率PdPower Dissipation | 1.25W |
Description & Applications | P-Channel 1.25-W, 2.5-V MOSFET |
描述与应用 | P沟道1.25-W,2.5-V MOSFET |
规格书PDF |