SI2319DS P沟道MOS场效应管 -40V -3A 0.065ohm SOT-23 marking/标记 C9U 功率MOSFET
| 最大源漏极电压VdsDrain-Source Voltage | -40V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | -3A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.065Ω @-3A,-10V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -1.0--3.0V |
| 耗散功率PdPower Dissipation | 1.25W |
| Description & Applications | FEATURES TrenchFET Power MOSFET |
| 描述与应用 | 功率MOSFET |
| 规格书PDF |
