SI3424DV-T1-E3 N沟道MOSFET 30V 8A SOT-163/SOT23-6/TSOP-6 marking/标记 24GAG 低导通电阻/低电压驱动
最大源漏极电压Vds Drain-Source Voltage | 30V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
最大漏极电流Id Drain Current | 8A |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.028Ω/Ohm @7A,10V |
开启电压Vgs(th) Gate-Source Threshold Voltage | 1-3V |
耗散功率Pd Power Dissipation | 2.98W |
Description & Applications | N-Channel 30-V (D-S) MOSFET TrenchFET Power MOSFET |
描述与应用 | N沟道30-V(D-S)的MOSFET 功率MOSFET |
规格书PDF |