SI3457DV P沟道MOS场效应管 -30V -4.3A 0.065ohm SOT-163 marking/标记 D5
最大源漏极电压VdsDrain-Source Voltage | -30V |
最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
最大漏极电流IdDrain Current | -4.3A |
源漏极导通电阻RdsDrain-Source On-State Resistance | 0.065Ω @-4.3A,-10V |
开启电压Vgs(th)Gate-Source Threshold Voltage | -1.0V |
耗散功率PdPower Dissipation | 2W |
Description & Applications | P-Channel 30-V (D-S) MOSFET |
描述与应用 | P沟道30-V(D-S)的MOSFET |
规格书PDF |