SI3865BDV 电源分配开关电源IC SOT-163 marking/标记 1AY 负荷开关电平转换
| 类型Type | 高端开关 high-side |
| 输出数Number of Outputs | 1 |
| Rds (On) | 60mΩ |
| 内部开关Internal Switch(s) | 有 YES |
| 电流限制Current Limit | 2.9A |
| 电压 - 输入Voltage - Input | 1.8V~8V |
| Description & Applications | Load Switch with Level-Shift • 80-mr Low rDS(on) TrenchFET • 1.8 to 8-V Input • 1.5 to 8-V Logic Level Control • Low Profile, Small Footprint TSOP-6 Package • 3000-V ESD Protection On Input Switch, VON/OFF • Adjustable Slew-Rate The Si3865DV includes a p- and n-channel MOSFET in a single TSOP- package. The low on-resistance p-channel TrenchFET is tailored for use as a load switch. The n-channel, with an external resistor, can be used as alevel-shift to drive the p-channel load-switch. The n-channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5-V. The Si3865DV operates on supply lines from 1.8 to 8-V, and can drive loads up to 2.7 A. |
| 描述与应用 | 负荷开关电平转换 •80-MR低RDS（ON）的TrenchFET？ •1.8到8 V输入 •1.5到8-V逻辑电平控制 •薄型，占地面积小TSOP-6封装 •3000 V ESD保护输入开关，VON/ OFF •可调摆率 SI3865DV包括TSOP封装在一个单一的一个p-和n-沟道MOSFET。低导通电阻的P通道的TrenchFET？是专为使用作为负载开关。 n-沟道，外部电阻器，可用于作为的alevel移位驱动的p-沟道负载开关。 n-沟道MOSFET具有内部的ESD保护和低至1.5-V可以由逻辑信号。 SI3865DV操作从1.8到8-V的供应线，并且可以驱动负载可达2.7 A。 |
| 规格书PDF |
