SI3812DV 复合场效应管MOSFET+肖特基二极管 20V 2A 500mA/0.5A 0.48V SOT-163/SOT23-6 marking/标记 12
| 最大源漏极电压VdsDrain-Source Voltage | N沟道 N-Channel |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | 12V |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 2A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 125mΩ@ VGS =4.5V, ID =2.4A |
| 耗散功率PdPower Dissipation | 0.6V |
| Description & Applications | 肖特基二极管SBD Schottky Barrier Diodes |
| 描述与应用 | 20V |
| 规格书PDF |
