SI5903DC-T1-E3 复合场效应管 -20V -2.1A 1206-8/vs-8 marking/标记 DAFAA
| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | -12V |
| 最大漏极电流IdDrain Current | -2.1A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 260mΩ@ VGS = -2.5V, ID = -1.7A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.6V |
| 耗散功率PdPower Dissipation | 1.1W |
| Description & Applications | Dual P-Channel 2.5-V (G-S) MOSFET |
| 描述与应用 | 双P沟道2.5-V（G-S）的MOSFET |
| 规格书PDF |
