TP0202T-T1 P沟道MOS场效应管 -20V -410mA 0.9ohm SOT-23 marking/标记 P3P 高速开关 低导通电阻
| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | -410mA/-0.41A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.9Ω @-200mA,-10V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -1.3--3.0V |
| 耗散功率PdPower Dissipation | 350mW/0.35W |
| Description & Applications | High-Side Switching ow On-Resistance: 0.9 Low Threshold: –2.1 V Fast Switching Speed: 18 ns Low Input Capacitance: 55 Pf |
| 描述与应用 | 高边开关 流导通电阻：0.9？ 低门槛：-2.1V 开关速度快：18纳秒 低输入电容：55 pF的 |
| 规格书PDF |
