UPA1911ATE N沟道MOSFET 20V 2.5A SOT-163/SOT23-6/TSOP-6 marking/标记 TK 高速开关/低导通电阻
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | 2.5A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.115Ω/Ohm @负1.5A,负4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.5--1.5V |
| 耗散功率Pd Power Dissipation | 200mW/0.2W |
| Description & Applications | MOS FIELD EFFECT TRANSISTOR DESCRIPTION The µPA1900 is a switching device which can be driven directly by a 2.5 V power source. The µPA1900 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be driven by a 2.5 V power source • Low on-state resistance RDS(on)1 = 35 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) RDS(on)2 = 38 mΩ MAX. (VGS = 4.0 V, ID = 3.0 A) RDS(on)3 = 45 mΩ MAX. (VGS = 2.5 V, ID = 3.0 A) |
| 描述与应用 | MOS场效应晶体管 说明 μPA1900是可驱动的开关装置直接由2.5 V电源。 μPA1900具有低通态电阻和优良的开关特性，是适合于的应用，如便携机的电源开关等 •可通过2.5 V电源驱动 •低通态电阻 RDS（上）1=35mΩ最大。 （VGS=4.5 V，ID= 3.0 A） 的RDS（on）=38mΩ最大。 （VGS=4.0 V，ID= 3.0 A） 的RDS（on）=45mΩ最大。 （VGS=2.5 V，ID= 3.0 A） |
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