BSP100 N沟道MOSFET 30V 6A SOT-223/SC-73/TO261-4 marking/标记 甚高频应用
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 6A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.1Ω/Ohm @2.2A,10v |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-2.8V |
| 耗散功率Pd Power Dissipation | 8.3W |
| Description & Applications | N-channel enhancement mode BSP100 TrenchMOS transistor • Trench’ technology VDSS = 30 V • Low on-state resistance • Fast switching ID = 6 A • High thermal cycling performance • Low thermal resistance |
| 描述与应用 | N沟道增强模式BSP100的TrenchMOS晶体管 •'战壕'技术VDSS= 30 V •低通态电阻 •快速切换ID=6 •高的热循环性能 •低热阻 |
| 规格书PDF |
