BSP16T1 PNP三极管 -350V -1A 15MHz 30~120 -2V SOT-223/TO-261AA marking/标记 BSP16
集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -350V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −300V |
集电极连续输出电流ICCollector Current(IC) | -1A |
截止频率fTTranstion Frequency(fT) | 15MHz |
直流电流增益hFEDC Current Gain(hFE) | 30~120 |
管压降VCE(sat)Collector-Emitter SaturationVoltage | -2V |
耗散功率PcPoWer Dissipation | 1.5W |
Description & Applications | High Voltage Transistor PNP Silicon |
描述与应用 | 高电压晶体管 PNP硅 |
规格书PDF |