BSP126 N沟道MOSFET 250V 375mA/0.375A SOT-223/SC-73/TO261-4 marking/标记 BSP126 高交叉调制性能/低反馈电容/低噪声增益控制放大
| 最大源漏极电压Vds Drain-Source Voltage | 250V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 375mA/0.375A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.005Ω/Ohm @300mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.8-2V |
| 耗散功率Pd Power Dissipation | 1.5W |
| Description & Applications | N-channel enhancement mode vertical D-MOS transistor •Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. |
| 描述与应用 | N沟道增强模式 垂直D-MOS晶体管 •直接连接到C-MOS，TTL等 •高速开关 •无二次击穿 |
| 规格书PDF |
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