BSS209PW P沟道MOS场效应管 -20V -580mA 0.369ohm SOT-323 marking/标记 X3
| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 12V |
| 最大漏极电流IdDrain Current | -0.58A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.369Ω @-580mA,-4.5V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.6--1.2V |
| 耗散功率PdPower Dissipation | 520mW/0.52W |
| Description & Applications | • P-Channel • Enhancement mode • Super Logic Level (2.5 V rated) • 150°C operating temperature • Avalanche rated • dv/dt rated |
| 描述与应用 | •P沟道 •增强模式 •超级逻辑电平（2.5 V额定） •150°C工作温度 •额定雪崩 •dv / dt的额定 |
| 规格书PDF |
