FDG327N N沟道MOSFET 20V 1.5A SOT-363/SC70-6/TSSOP6/SC-88 marking/标记 27 低漏源导通电阻
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | 1.5A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 140mΩ@ VGS = 1.8V, ID =1.2A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.4~1.5V |
| 耗散功率Pd Power Dissipation | 420mW/0.42W |
| Description & Applications | 20V N-Channel Power Trench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications. Applications • Load switch • Power management • DC/DC converter Features Fast switching speed Low gate charge High performance trench technology for extremely low RDS(ON) High power and current handling capability. |
| 描述与应用 | 20V N沟道功率沟槽MOSFET 概述 此N沟道MOSFET采用飞兆半导体先进的功率沟槽进程，已特别是针对减少通态电阻，同时保持出色的开关性能低栅极电荷。这些器件非常适合用于便携式电子产品应用。 应用 •负荷开关 •电源管理 •DC/ DC转换器 特点 开关速度快 低栅极电荷 高性能沟道技术极低的RDS（ON） 高功率和电流处理能力。 |
| 规格书PDF |
