IPD14N03L N沟道MOSFET 30V 30A TO-252/D-PAK marking/标记 14N03L 低导通电阻/最大DC电流能力/IPD03N03LAP
最大源漏极电压Vds Drain-Source Voltage | 30V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
最大漏极电流Id Drain Current | 30A |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.0108Ω/Ohm @20A,10V |
开启电压Vgs(th) Gate-Source Threshold Voltage | 1.2-2V |
耗散功率Pd Power Dissipation | 6W |
Description & Applications | N-Channel Logic Level Low on-resistance RDS(on) Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175°C operating temperature dv/dt rated Ideal for fast switching buck converter |
描述与应用 | 逻辑电平 低导通电阻RDS(ON) 优秀的门占用×RDS上) 产品(FOM) 卓越的热电阻 175°C工作温度 dv / dt的额定 非常适于快速开关降压转换器? |
规格书PDF |