IRFR210T N沟道MOSFET 200V 2.7A TO-252/D-PAK marking/标记 FR210 门源齐纳ESD坚固 门源齐纳ESD坚固
| 最大源漏极电压Vds Drain-Source Voltage | 200V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | |
| 最大漏极电流Id Drain Current | 2.7A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 1.5Ω/Ohm @1350mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 2.0-4.0V |
| 耗散功率Pd Power Dissipation | 2.5W |
| Description & Applications | DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. • 2.7A, 200V, RDS(on) = 1.5Ω @VGS = 10 V • Low gate charge ( typical 7.2 nC) • Low Crss ( typical 6.8 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability |
| 描述与应用 | 说明 Vishay的第三代功率MOSFET提供 设计师与快速切换的最佳组合， 坚固耐用的设备设计，低导通电阻和成本效益。 该DPAK是专为表面安装使用蒸汽相，红外线，或波峰焊技术。直 导致通孔版本（IRFU，赐福系列）安装应用程序。功耗水平，直至1.5 W 典型的表面贴装应用中是可能的。 •2.7A，200V，RDS上） =1.5Ω@ VGS= 10 V •低栅极电荷（典型7.2nC） •低Crss（典型6.8 pF） •快速开关 •100％雪崩测试 •改进的dv / dt能力 |
| 规格书PDF |
