IRLML5103TR P沟道MOS场效应管 -760mA 0.60ohm SOT-23 marking/标记 1D/D 快速开关
| 最大源漏极电压VdsDrain-Source Voltage | |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | -760mA/-0.76A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.60Ω @-600mA,-10V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -1.0V |
| 耗散功率PdPower Dissipation | 540mW/0.54W |
| Description & Applications | HEXFET POWER MOSFET dynamic avalanche rated surface mount straight lead available in tape&reel p-channel fast switching |
| 描述与应用 | HEXFET功率MOSFET 动态额定雪崩 表面贴装 直导致 可在磁带和卷轴 p-沟道 快速切换 |
| 规格书PDF |
