MTD9N10ET4 N沟道MOSFET 100V 9A TO-252/D-PAK marking/标记 高速开关/低导通电阻
| 最大源漏极电压Vds Drain-Source Voltage | 100V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 9A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.25Ω/Ohm @4500 |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.0-2.1V |
| 耗散功率Pd Power Dissipation | 40W |
| Description & Applications | Power MOSFET 9 Amps, 100 Volts N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. • Avalanche Energy Specified • Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Replaces MTD6N10 |
| 描述与应用 | 功率MOSFET 9安培，100伏特 N沟道DPAK 这种先进的功率MOSFET的设计可承受高 能源在雪崩和通讯模式。新能源 具有快速，高效的设计也提供了一个漏 - 源极二极管 恢复时间。专为低电压，高速切换 电源，转换器和PWM马达控制应用中， 这些器件特别适合于电路中的桥梁 二极管的速度和换向安全工作领域是至关重要的， 对意外的电压瞬变提供额外的安全边际。 •雪崩能量 •源漏二极管恢复时间等同于 离散快速恢复二极管 •二极管的特点是桥电路中使用 •IDSS和VDS（上） 指定高温 •替换MTD6N10 |
| 规格书PDF |
