NDS7002A N沟道MOSFET 60V 280mA/0.28A SOT-23/SC-59 marking/标记 712
| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 280mA/0.28A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 2Ω/Ohm @500mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.8-3V |
| 耗散功率Pd Power Dissipation | 300mW/0.3W |
| Description & Applications | N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. High density cell design for low RDS(ON) Voltage controlled small signalswitch. Rugged and reliable. High saturation current capability. |
| 描述与应用 | N沟道增强型场效应晶体管 概述 这些N沟道增强型场效应晶体管 生产采用飞兆半导体专有的，高密度， DMOS技术。这些产品被设计成 最大限度地减少通态电阻，同时提供了坚固，可靠的， 和快速开关性能。它们可以被用来在大多数 应用需要高达400mA的DC，并且可以提供 脉冲电流高达2A。这些产品特别 适用于低电压，低电流应用，如小 伺服电机控制，功率MOSFET的栅极驱动器，以及其他 开关应用。 高密度电池设计的低RDS（ON） 电压控制小信号开关坚固，可靠。 高饱和电流能力 |
| 规格书PDF |
