NDT452AP P沟道MOS场效应管 -30V -5A 0.052ohm SOT-223 marking/标记 452A 高密度电池设计 低导通电阻
最大源漏极电压VdsDrain-Source Voltage | -30V |
最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
最大漏极电流IdDrain Current | -5A |
源漏极导通电阻RdsDrain-Source On-State Resistance | 0.052Ω @-5A,-10V |
开启电压Vgs(th)Gate-Source Threshold Voltage | -1--2.8V |
耗散功率PdPower Dissipation | 300mW/0.3W |
Description & Applications | High density cell design for extremely low RDS(ON) High power and current handling capability in a widely used surface mount package. |
描述与应用 | 高密度电池设计极低的RDS(ON) 一种广泛使用的高功率和电流处理能力 表面贴装封装 |
规格书PDF |