NTHD4N02FT1 N沟道场效应管+肖特基二极管 SOT23-8 代码 C2L
场效应管类型 | N 沟道 |
MOS最大源漏极电压Vds Drain-Source Voltage |
40V |
MOS最大栅源极电压Vgs(±) Gate-Source Voltage |
12V |
MOS最大漏极电流Id Drain Current |
4.2A |
MOS源漏极导通电阻Rds(on) FET Drain-Source On-State Resistance |
RDS(on) = 75 m @ Vgs = 4.5 V
RDS(on) = 143 m @ Vgs = 2.5 V
|
MOS开启电压Vgs(th) Gate-Source Threshold Voltage |
0.6V |
二极管类型 | 肖特基二极管 |
DIODE反向电压Vr Reverse Voltage |
20V |
DIODE平均整流电流Io Average Rectified Current |
1A |
DIODE最大正向压降VF Forward Voltage(Vf) |
0.365V |
耗散功率Pd Power Dissipation |
2.1W |
描述与应用 Description & Applications |
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技术文档PDF下载 | 在线阅读 |
规格书PDF |