SI1304DL-T1 N沟道MOSFET 25V 750mA/0.75A SOT-323/SC-70 marking/标记 LBJ UIS等级曲线
最大源漏极电压Vds Drain-Source Voltage | 25V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
最大漏极电流Id Drain Current | 750mA/0.75A |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.350Ω/Ohm @750mA,4.5V |
开启电压Vgs(th) Gate-Source Threshold Voltage | 0.6-1.3V |
耗散功率Pd Power Dissipation | 280mW/0.28W |
Description & Applications | N-Channel 25-V (D-S) MOSFET |
描述与应用 | N沟道25-V(D-S)的MOSFET |
规格书PDF |