SI1405DL P沟道MOS场效应管 -8V -1.6A 210毫欧 SOT-363 marking/标记 OBD
最大源漏极电压VdsDrain-Source Voltage | -8V |
最大栅源极电压Vgs(±)Gate-Source Voltage | -8V |
最大漏极电流IdDrain Current | -1.6A |
源漏极导通电阻RdsDrain-Source On-State Resistance | 210mΩ@ VGS = -1.8V, ID = -0.8A |
开启电压Vgs(th)Gate-Source Threshold Voltage | -0.45 |
耗散功率PdPower Dissipation | 568mW/0.568W |
Description & Applications | P-Channel 1.8-V (G-S) MOSFET |
描述与应用 | P沟道1.8-V(G-S)的MOSFET |
规格书PDF |