SI1400DL-T1 N沟道MOSFET 20V 1.6A SOT-363/SC70-6/TSSOP6/SC-88 marking/标记 NDS 超高速开关/内置栅极保护二极管/DMOS结构式
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | 1.6A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 235mΩ@ VGS =2.5V, ID =1.3A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.6V |
| 耗散功率Pd Power Dissipation | 568mW/0.568W |
| Description & Applications | N-Channel 20 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Trench FET Power MOSFET • Compliant to RoHS Directive 2002/95/EC |
| 描述与应用 | N沟道20 V（D-S）的MOSFET 特点 •无卤素根据IEC 61249-2-21定义 •沟槽FET功率MOSFET •符合RoHS指令2002/95/EC |
| 规格书PDF |
