SI2312DS N沟道MOSFET 20V 4.9A SOT-23/SC-59 marking/标记 c2 低导通电阻
最大源漏极电压Vds Drain-Source Voltage | 20V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
最大漏极电流Id Drain Current | 4.9A |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.033Ω/Ohm @5A,4.5V |
开启电压Vgs(th) Gate-Source Threshold Voltage | 0.45-0.85V |
耗散功率Pd Power Dissipation | 1.25W |
Description & Applications | N-Channel 20-V (D-S) MOSFET |
描述与应用 | N沟道20-V(D-S的MOSFET |
规格书PDF |