SI5435DC P沟道MOS场效应管 -30V -5.6A 0.042ohm Vth:-1.0V 1206-8 marking/标记 BE
| 最大源漏极电压VdsDrain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | -5.6A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.042Ω @-4.1A,-10V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -1.0V |
| 耗散功率PdPower Dissipation | 2.5W |
| Description & Applications | P-Channel 30-V (D-S) MOSFET |
| 描述与应用 | P沟道30-V（D-S）的MOSFET |
| 规格书PDF |
