SI5473DC-T1 P沟道MOS场效应管 -12V -8.1A 22毫欧 1206-8 marking/标记 B1SAD 功率MOSFET 低导通电阻 便携式设备 负载开关
| 最大源漏极电压VdsDrain-Source Voltage | -12V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 8V |
| 最大漏极电流IdDrain Current | -8.1A/-0.1A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 22mΩ@ VGS = -4.5V, ID = -5.9A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.4V~-1.0V |
| 耗散功率PdPower Dissipation | 2.5W |
| Description & Applications | P-Channel 12-V (D-S) MOSFET FEATURES *TrenchFET Power MOSFETS * Low rDS(on) and Excellent Power Handling In Compact Footprint APPLICATIONS *Battery and Load Switch for Portable Devices |
| 描述与应用 | P沟道12-V（D-S）的MOSFET 特点 *TrenchFET 功率MOSFET *低导通电阻 应用 *用于便携式设备的电池和负载开关 |
| 规格书PDF |
