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SI3433BDV-T1-E3 P沟道MOS场效应管 -156A 60毫欧 SOT-163 marking/标记 B3 垂直DMOS 高速开关

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最大源漏极电压VdsDrain-Source Voltage
最大栅源极电压Vgs(±)Gate-Source Voltage
最大漏极电流IdDrain Current-156A
源漏极导通电阻RdsDrain-Source On-State Resistance60mΩ@ VGS = -1.8V, ID = -1A
开启电压Vgs(th)Gate-Source Threshold Voltage-0.8V
耗散功率PdPower Dissipation
Description & ApplicationsP-Channel 1.8-V (G-S) MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the p channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 5-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device.
描述与应用P沟道1.8-V(G-S)的MOSFET 特性 •P沟道垂直DMOS •宏模型(子电路模型) •级别3 MOS •申请线性和开关应用 •在精确-55到125°C温度范围 •模型的栅极电荷,瞬态,二极管反向恢复特性 说明 所附的SPICE模型描述了典型的电气特性的P沟道垂直DMOS。子电路模型提取和优化,在-55到125°C的温度范围下的脉冲0-V到5-V栅极驱动。该 饱和输出阻抗是最适合在靠近大门偏置阈值电压。 一种新型的栅漏反馈电容网络是用来模型栅极电荷特性,同时避免收敛困难交换C gd模型。所有模型参数值进行了优化,提供最适合的电气测量数据,并且不打算作为一个确切的设备的物理解释。
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