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AO6408 N沟道场效应管+ESD DIODES 20V 8.8A SOT-163/SOT23-6/TSOP6 marking/标记 D8R15 ESD应用 负载开关

价格(不含运费):
起批量(PCS):
¥1.000
≤99
¥0.900
≤499
¥0.750
≤999
¥0.650
≤2999
¥0.600
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产品描述
最大源漏极电压VdsDrain-Source Voltage 20V
最大栅源极电压Vgs(±)Gate-Source Voltage 12V
最大漏极电流IdDrain Current 8.8A
源漏极导通电阻RdsDrain-Source On-State Resistance 25.6mΩ@ VGS = 1.8V,ID =4A
开启电压Vgs(th)Gate-Source Threshold Voltage 0.5~1V
耗散功率PdPower Dissipation 2W
Description & Applications N-Channel Enhancement Mode Field Effect Transistor General Description The AO6408 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It offers operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is suitable for use as a load switch. Standard product AO6408 is Pbfree (meets ROHS & Sony 259 specifications). AO6408L is a Green Product ordering option. AO6408 and AO6408L are electrically identical.
描述与应用 N沟道增强型场效应晶体管 概述 AO6408采用先进沟道技术,提供优良的RDS(ON)和栅极电荷低。它提供了运行在很宽的范围从1.8V到12V的栅极驱动。这是ESD保护。这个装置是适合用于作为负载开关。标准产品AO6408是无铅认证(符合ROHS&索尼259规格)。 AO6408L是一种绿色产品订购选项。 AO6408和AO6408L是电动相同。
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