我的订单
分享到:
当前位置:首页 > 现货库存 > 商品详情

FDG315N N沟道MOSFET 30V 2A SOT-363/SC70-6/TSSOP6/SC-88 marking/标记 15 低漏源导通电阻

热销商品

产品描述
最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current2A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance160mΩ@ VGS = 4.5V, ID =1.7A
开启电压Vgs(th) Gate-Source Threshold Voltage1~3V
耗散功率Pd Power Dissipation750mW/0.75W
Description & ApplicationsN-Channel Logic Level Power Trench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications. Applications • Load switch • Power management • DC/DC converter Features • Low gate charge. • High performance trench technology for extremely low RDS(ON). • Compact industry standard SC70-6 surface mount package.
描述与应用N沟道逻辑电平功率沟槽MOSFET 概述 此N沟道MOSFET采用飞兆半导体先进的功率沟槽进程,已特别是针对减少通态电阻,同时保持出色的开关性能低栅极电荷。这些器件非常适合用于便携式电子产品应用。 应用 •负荷开关 •电源管理 •DC/ DC转换器 特点 •低栅极电荷。 •高性能沟道技术极低的RDS(ON)。 •紧凑型工业标准SC70-6表面贴装封装。
规格书PDF
相关型号列表

备案/许可证号:粤ICP备14038557号 Copyright ©: 2017 爱瑞凯电子商城版权所有 并保留所有权利
客服电话0755-88869068
工作时间:周一至周六 8:00~22:00